n-channel enhancement mode field effect transistor.
n-channel enhancement mode field effect transistor.
60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-2.
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