60V, 4A, RDS(ON) = 85mΩ @VGS = 10V. RDS(ON) = 100mΩ @VGS = 5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-2.

N-Channel Enhancement Mode Field Effect Transistor

CET3055

CET3252

CET3301

CET01N65A

CET0215

CET04N10

CET4301

CET4401B

CET4435A

CET451AN

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